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The bottom layer of graphene blockchain
Publish: 2021-04-21 11:00:11
1.
Graphene, graphene, is the underlying technology architecture of blockchain created by EOS founder Daniel Larimer and cryptonomex team. Based on this architecture, Daniel has developed bitshares, stem, EOS and other far-reaching projects. The famous blockchain projects developed based on this architecture include Zoomlion auto chain, gongxinbao, karma, payger, echo, seer and so on
Zac chain is an electric vehicle intelligent ecosystem based on blockchain technology. Supported by the core technology of blockchain, supplemented by AI, big data, Internet of things and other technologies, and based on the vehicle traveling data recorder tntelligent tree as the carrier, it customizes an intelligent experience service system for electric vehicle users, covering both the front market and the back market. In the Zac chain network, users can fully control their own driving data, and enter the mining mode from the blockchain technology. Driving is mining, and driving is value. The Zac token generated by mining can be exchanged in the Zac chain ecosystem to solve the pain point of depreciation of users' car use
2. Based on graphene underlying technology, blockchain has decentralization, consensus mechanism, encryption calculation, information can not be tampered with, and high efficiency and transparency, which can effectively solve the instry pain point problem
with the decentralization of blockchain, there is no need to rely on the third-party platform for sales, recing the price difference between middlemen and direct sellers to consume independently by buyers
every commodity can be easily accessed from planting, proction, processing, consumption and after-sales, so as to avoid the expiration and counterfeiting of commodities
the price of every commodity is clearly marked. Once the information is generated, it can not be tampered with to ensure the rights and interests of businesses and consumers Weifang technology company reports for you.
with the decentralization of blockchain, there is no need to rely on the third-party platform for sales, recing the price difference between middlemen and direct sellers to consume independently by buyers
every commodity can be easily accessed from planting, proction, processing, consumption and after-sales, so as to avoid the expiration and counterfeiting of commodities
the price of every commodity is clearly marked. Once the information is generated, it can not be tampered with to ensure the rights and interests of businesses and consumers Weifang technology company reports for you.
3. Yes, it is generally believed that the three domestic public chains are quantum, Xiaoyi and gongxinbao, which is the so-called "three domestic treasures: quantum, Xiaoyi and gongxinbao". Gongxinbao is built by gongxinbao team. Gongxinbao was established in 2016 and is a data technology company with blockchain as the core technology
4. With the mission of inheriting Hongmen brand, Honghua foundation, under the most advanced dpos consensus mechanism and based on graphene architecture, has created a high-performance bottom public chain and launched its own blockchain ecosystem to empower enterprises.
5. Graphene is not only the thinnest known material, but also very firm and hard; As a simple substance, it can transfer electrons faster than any known conctor at room temperature. In 2004, graphene was prepared by Andre K Geim of Manchester University in England. Haim and his colleagues came across a new and easy way. They forcibly separate the graphite into smaller pieces, peel the thinner graphite flakes from the pieces, then stick the two sides of the flake with ordinary plastic tape, tear the tape, and the flake will split into two. By repeating this process, you get thinner and thinner sheets of graphite, some of which consist of only one layer of carbon atoms - they make graphene. There are two main synthesis methods of graphene: mechanical method and chemical method. Mechanical methods include micromechanical separation, oriented epitaxy and SIC heating; The chemical method is chemical dispersion. The most common method of micromechanical separation is micromechanical separation, which directly cuts the graphene sheet from the larger crystal. In 2004, novoselovt et al. Prepared graphene monolayers by this method, which can exist stably in the external environment. The typical preparation method is to use another material to expand or introce defects of pyrolytic graphite for friction, the surface of bulk graphite will proce flocculent crystals, in which there is a single layer of graphene. But the disadvantage of this method is that it is difficult to control the size of the single-layer graphene sheet by using the sheet obtained by rubbing the graphite surface, and it is unable to reliably manufacture the graphite sheet with enough length for application. Oriented epitaxy method crystal film growth oriented epitaxy method is to use the atomic structure of the growth matrix to "seed" graphene. First, carbon atoms are infiltrated into ruthenium at 1150 ℃, and then cooled. After cooling to 850 ℃, a large number of previously absorbed carbon atoms will float to the surface of ruthenium, and the single layer of carbon atoms with lens shape "islands" cover the whole surface of the matrix, Eventually they grow into a complete layer of graphene. After the first layer was covered by 80%, the second layer began to grow. The graphene in the bottom layer has strong interaction with ruthenium, while the graphene in the second layer is almost completely separated from ruthenium, leaving only weak electric coupling. The graphene sheet obtained is satisfactory. However, the thickness of graphene sheet proced by this method is often uneven, and the adhesion between graphene and matrix will affect the characteristics of carbon layer. In addition, the matrix used by Peter W. Sutter is rare metal ruthenium. The method of heating SiC is to remove Si by heating single crystal 6h SiC and decompose graphene layer on (0001) surface of single crystal. The specific process is as follows: the oxygen or hydrogen etched sample is heated by electron bombardment in high vacuum to remove oxide. After the oxide on the surface is completely removed by AES, the sample is heated to 1250 ~ 1450 ℃ and then kept at constant temperature for 1 min ~ 20 min to form a very thin graphite layer. Berger et al. Have been able to prepare monolayer or multilayer graphene under control after several years of exploration. The thickness of graphene is determined by heating temperature, so it is difficult to prepare large area graphene with single thickness. It is a new way to prepare high-quality free standing graphene materials by pyrolysis of commercial SiC particles. The structure and size of graphene can be controlled by controlling raw SiC particles, pyrolysis temperature, pyrolysis rate and atmosphere. This is a very novel preparation method, which is very important for the practical application of graphene. The method of chemical dispersion is to mix graphite oxide and water in the ratio of 1 mg / ml, shake the solution with ultrasonic wave until the solution is clear and free of granular substance, add appropriate amount of hydrazine, reflux at 100 ℃ for 24 h to proce black granular precipitation, filter and dry to obtain graphene. Sasha stankovich et al. Prepared graphene with a thickness of about 1 nm by chemical dispersion method.
6. Graphene appeared in the laboratory in 2004, when two British scientists, Andre Jem and Kostya Novoselov, discovered that they could get thinner and thinner sheets of graphite in a very simple way. They peel the graphite sheet from the graphite, then stick both sides of the sheet to a special tape, tear the tape, and the graphite sheet can be divided into two. And they kept doing this, and the sheets got thinner and thinner, and finally they got a sheet of carbon atoms, which is graphene. After five years of development, people found that it is not far to bring graphene into the field of instrial proction< There are two main synthesis methods of graphene: mechanical method and chemical method. Mechanical methods include micromechanical separation, oriented epitaxy and SIC heating; Chemical methods are chemical rection and chemical cleavage
micromechanical separation
the most common method is micromechanical separation, which directly cuts the graphene sheet from the larger crystal. In 2004, novoselovt et al. Prepared graphene monolayers by this method, which can exist stably in the external environment. The typical preparation method is to use another material to expand or introce defects of pyrolytic graphite for friction, the surface of bulk graphite will proce flocculent crystals, in which there is a single layer of graphene. But the disadvantage of this method is that it is difficult to control the size of the single-layer graphene sheet by using the sheet obtained by rubbing the graphite surface, and it is unable to reliably manufacture the graphite sheet with enough length for application< In this method, carbon atoms are first infiltrated into ruthenium at 1150 ℃, and then cooled. After cooling to 850 ℃, a large number of previously absorbed carbon atoms will float to the surface of ruthenium, and monolayer "islands" of carbon atoms in the shape of lens cover the whole surface of the substrate, Eventually they grow into a complete layer of graphene. After the first layer was covered by 80%, the second layer began to grow. The graphene in the bottom layer has strong interaction with ruthenium, while the graphene in the second layer is almost completely separated from ruthenium, leaving only weak electric coupling. The graphene sheet obtained is satisfactory. However, the thickness of graphene sheet proced by this method is often uneven, and the adhesion between graphene and matrix will affect the characteristics of carbon layer. In addition, the matrix used by Peter W. Sutter is rare metal ruthenium
heating SiC method
in this method, Si is removed by heating single crystal 6h SiC, and graphene layers are decomposed on (0001) surface of single crystal. The specific process is as follows: the oxygen or hydrogen etched sample is heated by electron bombardment in high vacuum to remove oxide. After the oxide on the surface is completely removed by AES, the sample is heated to 1250 ~ 1450 ℃ and then kept at constant temperature for 1 min ~ 20 min to form a very thin graphite layer. Berger et al. Have been able to prepare monolayer or multilayer graphene under control after several years of exploration. The thickness of graphene is determined by heating temperature, so it is difficult to prepare large area graphene with single thickness. It is a new way to prepare high-quality free standing graphene materials by pyrolysis of commercial SiC particles. The structure and size of graphene can be controlled by controlling raw SiC particles, pyrolysis temperature, pyrolysis rate and atmosphere. This is a very novel preparation method, which is very important for the practical application of graphene
chemical rection method
the chemical rection method is to mix graphite oxide and water in the ratio of 1 mg / ml, shake the solution with ultrasonic wave until the solution is clear and free of granular substances, add appropriate amount of hydrazine, reflux at 100 ℃ for 24 h to proce black granular precipitation, filter and dry to obtain graphene. Sasha stankovich et al. Prepared graphene with a thickness of about 1 nm by chemical dispersion method[ 3]
chemical cleavage method
chemical cleavage method is a method of preparing graphene from graphite oxide by thermal rection. The oxygen-containing functional groups between the layers of graphite oxide react at a certain temperature to rapidly release gas, so that the graphene layer can be reced and cleaved at the same time to obtain graphene. This is an important method to prepare graphene. Yang Quanhong of Tianjin University prepared high quality graphene by low temperature chemical cleavage of graphite oxide.
micromechanical separation
the most common method is micromechanical separation, which directly cuts the graphene sheet from the larger crystal. In 2004, novoselovt et al. Prepared graphene monolayers by this method, which can exist stably in the external environment. The typical preparation method is to use another material to expand or introce defects of pyrolytic graphite for friction, the surface of bulk graphite will proce flocculent crystals, in which there is a single layer of graphene. But the disadvantage of this method is that it is difficult to control the size of the single-layer graphene sheet by using the sheet obtained by rubbing the graphite surface, and it is unable to reliably manufacture the graphite sheet with enough length for application< In this method, carbon atoms are first infiltrated into ruthenium at 1150 ℃, and then cooled. After cooling to 850 ℃, a large number of previously absorbed carbon atoms will float to the surface of ruthenium, and monolayer "islands" of carbon atoms in the shape of lens cover the whole surface of the substrate, Eventually they grow into a complete layer of graphene. After the first layer was covered by 80%, the second layer began to grow. The graphene in the bottom layer has strong interaction with ruthenium, while the graphene in the second layer is almost completely separated from ruthenium, leaving only weak electric coupling. The graphene sheet obtained is satisfactory. However, the thickness of graphene sheet proced by this method is often uneven, and the adhesion between graphene and matrix will affect the characteristics of carbon layer. In addition, the matrix used by Peter W. Sutter is rare metal ruthenium
heating SiC method
in this method, Si is removed by heating single crystal 6h SiC, and graphene layers are decomposed on (0001) surface of single crystal. The specific process is as follows: the oxygen or hydrogen etched sample is heated by electron bombardment in high vacuum to remove oxide. After the oxide on the surface is completely removed by AES, the sample is heated to 1250 ~ 1450 ℃ and then kept at constant temperature for 1 min ~ 20 min to form a very thin graphite layer. Berger et al. Have been able to prepare monolayer or multilayer graphene under control after several years of exploration. The thickness of graphene is determined by heating temperature, so it is difficult to prepare large area graphene with single thickness. It is a new way to prepare high-quality free standing graphene materials by pyrolysis of commercial SiC particles. The structure and size of graphene can be controlled by controlling raw SiC particles, pyrolysis temperature, pyrolysis rate and atmosphere. This is a very novel preparation method, which is very important for the practical application of graphene
chemical rection method
the chemical rection method is to mix graphite oxide and water in the ratio of 1 mg / ml, shake the solution with ultrasonic wave until the solution is clear and free of granular substances, add appropriate amount of hydrazine, reflux at 100 ℃ for 24 h to proce black granular precipitation, filter and dry to obtain graphene. Sasha stankovich et al. Prepared graphene with a thickness of about 1 nm by chemical dispersion method[ 3]
chemical cleavage method
chemical cleavage method is a method of preparing graphene from graphite oxide by thermal rection. The oxygen-containing functional groups between the layers of graphite oxide react at a certain temperature to rapidly release gas, so that the graphene layer can be reced and cleaved at the same time to obtain graphene. This is an important method to prepare graphene. Yang Quanhong of Tianjin University prepared high quality graphene by low temperature chemical cleavage of graphite oxide.
7. I think you should know this when you look at the introction of some methods for preparing graphene, because the introction of these methods is about what materials, tools and environment this method needs to use
you only need to make clear the current methods of preparing graphene, because the preparation methods all explain what materials and how to make them< The most common method is micromechanical separation, which directly cuts the graphene sheet from the larger crystal. In 2004, Heim et al. Prepared single-layer graphene by this method, which can exist stably in the external environment. The typical preparation method is to use another material to expand or introce defects of pyrolytic graphite for friction, the surface of bulk graphite will proce flocculent crystals, in which there is a single layer of graphene. But the disadvantage of this method is that it is not easy to control the size of the single-layer graphene sheet by using the sheet obtained by rubbing the graphite surface, and it is unable to reliably manufacture the graphite sheet with enough length for application< In this method, the silicon is removed by heating the single crystal silicon carbide, and the graphene layer is decomposed on the (0001) surface of the single crystal. The specific process is as follows: the oxygen or hydrogen etched sample is heated by electron bombardment in high vacuum to remove oxide. After the oxide on the surface is completely removed by AES, the sample is heated to 1250 ~ 1450 ℃ and then kept at constant temperature for 1min ~ 20min to form a very thin graphite layer? Claire Berger et al. Have been able to prepare monolayer or multilayer graphene in a controllable way. It is easy to get up to 100 layers of graphene on C-terminated surface. The thickness of graphene is determined by heating temperature, so it is difficult to prepare large area graphene with single thickness
metal surface growth
oriented epitaxy method is to "seed" graphene by using the growth matrix atomic structure. First, carbon atoms are infiltrated into ruthenium at 1150 ℃, and then cooled. After cooling to 850 ℃, a large number of previously absorbed carbon atoms will float to the ruthenium surface, and the lens like monolayer of carbon atoms "islands" cover the whole substrate surface, Eventually they grow into a complete layer of graphene. After the first layer was covered by 80%, the second layer began to grow. The graphene in the bottom layer interacts strongly with ruthenium, while the graphene in the second layer is almost completely separated from ruthenium, leaving only weak electrical coupling. The graphene sheet obtained is satisfactory. However, the thickness of graphene sheet proced by this method is often uneven, and the adhesion between graphene and matrix will affect the characteristics of carbon layer. In addition, the matrix used by Peter Sutter is rare metal ruthenium< Single and double layers of graphene can also be obtained by heating and oxidation< The graphene oxide paper was put into pure hydrazine solution (a compound of hydrogen and nitrogen atoms), which can rece the graphene oxide paper to single-layer graphene
sodium ethoxide cracking
a paper published in 2008 describes a process that can proce graphene in grams. First, ethanol is reced by nano metal, and then the ethoxide proct is cracked, and the sodium salt is removed by water washing to get graphene bonded together. Then, the graphene is dispersed by mild sonic vibration, and the pure graphene in grams can be made< The method of cutting carbon nanotubes is also under test. One method is to cut multi walled carbon nanotubes in solution with potassium permanganate and sulfuric acid. Another method uses plasma etching to partially embed polymer nanotubes.
you only need to make clear the current methods of preparing graphene, because the preparation methods all explain what materials and how to make them< The most common method is micromechanical separation, which directly cuts the graphene sheet from the larger crystal. In 2004, Heim et al. Prepared single-layer graphene by this method, which can exist stably in the external environment. The typical preparation method is to use another material to expand or introce defects of pyrolytic graphite for friction, the surface of bulk graphite will proce flocculent crystals, in which there is a single layer of graphene. But the disadvantage of this method is that it is not easy to control the size of the single-layer graphene sheet by using the sheet obtained by rubbing the graphite surface, and it is unable to reliably manufacture the graphite sheet with enough length for application< In this method, the silicon is removed by heating the single crystal silicon carbide, and the graphene layer is decomposed on the (0001) surface of the single crystal. The specific process is as follows: the oxygen or hydrogen etched sample is heated by electron bombardment in high vacuum to remove oxide. After the oxide on the surface is completely removed by AES, the sample is heated to 1250 ~ 1450 ℃ and then kept at constant temperature for 1min ~ 20min to form a very thin graphite layer? Claire Berger et al. Have been able to prepare monolayer or multilayer graphene in a controllable way. It is easy to get up to 100 layers of graphene on C-terminated surface. The thickness of graphene is determined by heating temperature, so it is difficult to prepare large area graphene with single thickness
metal surface growth
oriented epitaxy method is to "seed" graphene by using the growth matrix atomic structure. First, carbon atoms are infiltrated into ruthenium at 1150 ℃, and then cooled. After cooling to 850 ℃, a large number of previously absorbed carbon atoms will float to the ruthenium surface, and the lens like monolayer of carbon atoms "islands" cover the whole substrate surface, Eventually they grow into a complete layer of graphene. After the first layer was covered by 80%, the second layer began to grow. The graphene in the bottom layer interacts strongly with ruthenium, while the graphene in the second layer is almost completely separated from ruthenium, leaving only weak electrical coupling. The graphene sheet obtained is satisfactory. However, the thickness of graphene sheet proced by this method is often uneven, and the adhesion between graphene and matrix will affect the characteristics of carbon layer. In addition, the matrix used by Peter Sutter is rare metal ruthenium< Single and double layers of graphene can also be obtained by heating and oxidation< The graphene oxide paper was put into pure hydrazine solution (a compound of hydrogen and nitrogen atoms), which can rece the graphene oxide paper to single-layer graphene
sodium ethoxide cracking
a paper published in 2008 describes a process that can proce graphene in grams. First, ethanol is reced by nano metal, and then the ethoxide proct is cracked, and the sodium salt is removed by water washing to get graphene bonded together. Then, the graphene is dispersed by mild sonic vibration, and the pure graphene in grams can be made< The method of cutting carbon nanotubes is also under test. One method is to cut multi walled carbon nanotubes in solution with potassium permanganate and sulfuric acid. Another method uses plasma etching to partially embed polymer nanotubes.
8.
Graphite is a crystal composed of layers of honeycomb like ordered planar carbon atoms. When the graphite sheet is peeled into a single layer by physical or chemical methods, the graphite sheet with only one single atomic layer is called single carbon layer graphene
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